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| elektronische bauelemente MPS2907A pnp silicon general purpose transistor to-92 ? features . epitaxial planar die construction . complementary npn type available (mps2222a) . ideal for medium power amplification and switching ? maximum ratings rating symbol value unit collector - emitter voltage v ceo -60 v collector - base voltage v cbo -60 v emitter - base voltage v ebo -5.0 v collector current - continuous i c -600 ma total device dissipation @ t a = 25 : 625 mw derate above 25 : p d 5.0 mw / : total device dissipation @ t c = 25 : 1.5 watts derate above 25 : p d 12 mw / : operating and storage junction temperature range t j , t stg -55 ~ +150 : ? thermal characteristics characteristic symbol max. unit thermal resistance, junction to ambient r ja 200 / w : thermal resistance, junction to case r jc 83.3 / w : ? electrical characteristics (t a = 25 : unless otherwise noted) characteristic symbol min. max. unit off characteristics collector - emitter breakdown voltage (1) (i c = -10 ma, i b = 0) v (br)ceo -40 - v collector - base breakdown voltage (i c = -10 a, i e = 0) v (br)cbo -60 - v emitter - base breakdown voltage (i e = -10 a, i c = 0) v (br)ebo -5.0 - v collector cut-off current (v ce = -50 v, v eb(off) = -0.5 v) i cex - -50 na collector cut-off current (v cb = -50 v, i e = 0) - -0.10 (v cb = -50 v, i e = 0, t a = 150 ) : i cbo - -15 a emitter cut-off current (v eb = -3.0 v, i c = 0) i ebo - -100 na collector cut-off current (v ce = -35 v) i ceo - -100 na base cut-off current (v ce = -30 v, v eb(off) = -0.5 v) i bex - -50 na 1. pulse test: pulse width ? 300 s, duty cycle ? 2.0 %. http://www.secosgmbh.com/ any changing of specification will not be informed individual 1 2 3 collector 3 2 base 1 emitter 0 1 - j u n - 2 0 0 2 r e v . a p a g e 1 o f 5 rohs compliant product a suffix of "-c" specifies halogen & lead-free
elektronische bauelemente MPS2907A pnp silicon general purpose transistor ? electrical characteristics (t a = 25 : unless otherwise noted) (continued) characteristic symbol min. max. unit on characteristics dc current gain (i c = -0.1 ma, v ce = -10 v) 75 - (i c = -1.0 ma, v ce = -10 v) 50 - (i c = -10 ma, v ce = -10 v) 100 - (i c = -150 ma, v ce = -10 v) (1) 100 300 (i c = -500 ma, v ce = -10 v) (1) h fe 50 - - collector - emitter saturation voltage (1) (i c = -150 ma, i b = -15 ma) - -0.3 (i c = -500 ma, i b = -50 ma) v ce(sat) - -1.0 v base - emitter saturation voltage (1) (i c = -150 ma, i b = -15 ma) - -1.3 (i c = -500 ma, i b = -50 ma) v be(sat) - -2.0 v small - signal characteristics current - gain - bandwidth product (1) (2) (i c = -50 ma, v ce = -20 v, f = 100 mhz) f t 200 - mhz output capacitance (v cb = -10 v, i e = 0, f = 1.0 mhz) c obo - 8.0 pf input capacitance (v eb = -2.0 v, i c = 0, f = 1.0 mhz) c ibo - 30 pf switching characteristics turn-on time t on - 50 ns delay time t d - 10 ns rise time (v cc = -30 v, i c = -150 ma, i b1 = -15 ma) (figure 1 and 5) t r - 40 ns turn-off time t off - 110 ns storage time t s - 80 ns fall time (v cc = -6.0 v, i c = -150 ma, i b1 = i b2 = -15 ma) (figure 2) t f - 30 ns 1. pulse test: pulse width ? 300 s, duty cycle ? 2.0 %. 2. f t is defined as the frequency at which | h fe | extrapolates to unity. http://www.secosgmbh.com/ any changing of specification will not be informed individual ? ! " ? ! " figure 1. delay and rise time test circuit figure 2. storage and fall time test circuit 01-jun-2002 rev. a page 2 of 5 elektronische bauelemente MPS2907A pnp silicon general purpose transistor ? typical characteristics http://www.secosgmbh.com/ any changing of specification will not be informed individual figure 3. dc current gain # $%&' ( ) * #& + ,& figure 4. collector saturation region - #-& $%&' . / #&,$' %& %& %& %& figure 5. turn?on time # figure 6. turn?off time # $%&' 0#$ ' 0#$ ' 0 1 0 2 3 -$ 44' 5 - ( 0 4 0 0 5/0 4 5 - - - ( 01-jun-2002 rev. a page 3 of 5 elektronische bauelemente MPS2907A pnp silicon general purpose transistor http://www.secosgmbh.com/ any changing of specification will not be informed individual figure 7. frequency effects 4# 6 7$ 89' figure 8. source resistance effects # &$8' # , $2-' # , $2-' 4 89 & & & %& & / . / . %&# . &# &# &# figure 9. capacitances &,$' figure 10. current?gain ? bandwidth product # $%&' #&&&$: ' figure 11. ?on? voltage # $%&' figure 12. temperature coefficients # $%&' #&,$' ( -$ ;0' 3 5 - $ ;0' 3 5 - -$ ' 3 4 1 $ ;0' 4 # ,&<-&+!+8+ $89' $%5 ' . / . / . => ?> ( - 4 1 - 01-jun-2002 rev. a page 4 of 5 elektronische bauelemente MPS2907A pnp silicon general purpose transistor ? to-92 package outline dimensions http://www.secosgmbh.com/ any changing of specification will not be informed individual min max min max a 3.300 3.700 0.130 0.146 a1 1.100 1.400 0.043 0.055 b 0.380 0.550 0.015 0.022 c 0.360 0.510 0.014 0.020 d 4.400 4.700 0.173 0.185 d1 3.430 0.135 e 4.300 4.700 0.169 0.185 e e1 2.440 2.640 0.096 0.104 l 14.100 14.500 0.555 0.571 ? 1.600 0.063 0.000 0.380 0.000 0.015 symbol dimensions in millimeters dimensions in inches 1.270typ 0.050typ 012002e. a pe55 |
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